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Advance Technical Information
HiperFET TM
Power MOSFETs
Q3-Class
IXFK24N100Q3
IXFX24N100Q3
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1000V
24A
440m Ω
300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-264 (IXFK)
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
I DM
I A
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
Maximum Ratings
1000
1000
± 30
± 40
24
60
24
V
V
V
V
A
A
A
G
D
S
PLUS247 (IXFX)
Tab
E AS
dv/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
2
50
J
V/ns
G
D
S
Tab
P D
T J
T JM
T stg
T C = 25 ° C
1000
-55 ... +150
150
-55 ... +150
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T L
T SOLD
M d
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
300
260
1.13/10
° C
° C
Nm/lb.in.
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
F C
Weight
Mounting Force
TO-264
PLUS247
(PLUS247)
20..120 /4.5..27
10
6
N/lb.
g
g
Low R DS(on) and Q G
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS = 0V, I D = 1mA
1000
V
DC-DC Converters
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4mA
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
3.5
6.5 V
± 200 nA
25 μ A
1.5 mA
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
440 m Ω
? 2011 IXYS CORPORATION, All Rights Reserved
DS100393(10/11)
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